Surface conductance of Si(100)2 x 1 and Si(111)7 x 7

被引：6

作者：

Yoo, K

Weitering, HH

机构：

[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, NL-2628 CJ Delft, Netherlands

[3] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA

来源：

SURFACE SCIENCE | 2001年 / 482卷

关键词：

low energy electron diffraction (LEED); scanning tunneling microscopy; oxidation; surface electrical transport (surface conductivity; surface recombination; etc.); silicon; semiconducting surfaces;

D O I：

10.1016/S0039-6028(01)00931-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface conductance of Si(1 0 0)2 x 1 and Si(1 1 1)7 x 7 was measured as a function of temperature on a fully-depleted Si/SiO2/Si substrate. The surface conductance of Si(1 0 0)2 x 1 shows a clear signature of the c(4 x 2) --> 2 x 1 order-disorder surface phase transition near 200 K. The surface conductance of Si(1 1 1)7 x 7 increases dramatically after passivation with molecular oxygen. This phenomenon is not yet understood. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：482 / 487

页数：6

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