Influence of XeCl laser irradiation on the laser damage threshold of the Nd:YAG crystal

被引：8
作者：
Panahibakhsh, S. [1 ,2 ]
Jelvani, S. [1 ]
Maleki, M. H. [1 ]
Mollabashi, M. [4 ]
Jaberi, M. [3 ]
机构：
[1] Laser & Opt Res Inst, Tehran, Iran
[2] Amirkabir Univ Technol, Dept Energy Engn & Phys, Tehran, Iran
[3] Univ Guilan, Dept Phys, Rasht, Iran
[4] Iran Univ Sci & Technol, Dept Phys, Tehran, Iran
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 05期
关键词：
Laser damage threshold; Nd:YAG crystal; XeCl laser;
D O I：
10.1007/s11082-014-9966-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A thin disc Nd:YAG crystal sample was irradiated with 500 pulses of XeCl laser at laser fluence and 25 Hz repetition rate. The UV-Vis-NIR and additional absorption spectra of the sample showed that optical transmission of the Nd:YAG crystal increased in ultraviolet and visible regions due to elimination of some oxygen vacancies of the crystal following the irradiation. Increase in laser damage threshold of the Nd:YAG crystal sample subsequent to annihilation of oxygen vacancies was obtained by the laser damage threshold experiment. The laser damage thresholds of the irradiated and un-irradiated crystals were measured using 30 ns, 1,064 nm single longitudinal mode, pulses of a passively Q-switched Nd:YAG laser. The laser damage threshold of the irradiated crystal (after dividing by to scale for pulse duration of 10 ns) was obtained to be . It is nearly five times as high as that of un-irradiated Nd:YAG crystal, which was found to be 102 +/- 15J/cm(2).
引用
收藏
页码：1101 / 1107
页数：7
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