Influence of XeCl laser irradiation on the laser damage threshold of the Nd:YAG crystal

被引：8

作者：

Panahibakhsh, S. ^{[1
,2
]}

Jelvani, S. ^{[1
]}

Maleki, M. H. ^{[1
]}

Mollabashi, M. ^{[4
]}

Jaberi, M. ^{[3
]}

机构：

[1] Laser & Opt Res Inst, Tehran, Iran

[2] Amirkabir Univ Technol, Dept Energy Engn & Phys, Tehran, Iran

[3] Univ Guilan, Dept Phys, Rasht, Iran

[4] Iran Univ Sci & Technol, Dept Phys, Tehran, Iran

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 05期

关键词：

Laser damage threshold; Nd:YAG crystal; XeCl laser;

D O I：

10.1007/s11082-014-9966-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin disc Nd:YAG crystal sample was irradiated with 500 pulses of XeCl laser at laser fluence and 25 Hz repetition rate. The UV-Vis-NIR and additional absorption spectra of the sample showed that optical transmission of the Nd:YAG crystal increased in ultraviolet and visible regions due to elimination of some oxygen vacancies of the crystal following the irradiation. Increase in laser damage threshold of the Nd:YAG crystal sample subsequent to annihilation of oxygen vacancies was obtained by the laser damage threshold experiment. The laser damage thresholds of the irradiated and un-irradiated crystals were measured using 30 ns, 1,064 nm single longitudinal mode, pulses of a passively Q-switched Nd:YAG laser. The laser damage threshold of the irradiated crystal (after dividing by to scale for pulse duration of 10 ns) was obtained to be . It is nearly five times as high as that of un-irradiated Nd:YAG crystal, which was found to be 102 +/- 15J/cm(2).

引用

页码：1101 / 1107

页数：7

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