Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

被引:8
|
作者
Ono, Ryo [1 ]
Imai, Shinya [1 ]
Kusama, Yuta [2 ]
Hamada, Takuya [1 ]
Hamada, Masaya [1 ]
Muneta, Iriya [1 ]
Kakushima, Kuniyuki [1 ]
Tsutsui, Kazuo [1 ]
Kano, Emi [2 ]
Ikarashi, Nobuyuki [2 ]
Wakabayashi, Hitoshi [1 ]
机构
[1] Tokyo Inst Technol, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan
[2] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648601, Japan
关键词
MoS2; sputter; PVD; sub-monolayer; FIELD-EFFECT TRANSISTOR; THERMAL-EXPANSION; GRAIN-BOUNDARIES; LARGE-AREA; LAYER; TRANSPORT; PROMOTER; GROWTH;
D O I
10.35848/1347-4065/ac3fc9
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sputtering enables uniform and clean deposition over a large area, which is an issue with exfoliation and chemical vapor deposition methods. On the other hand, the process of physical vapor deposition (PVD) film formation has not yet been clarified. We prepared several samples from the sub-monolayer region, and performed Raman spectroscopy, X-ray photon spectroscopy and high-angle annular dark-field scanning transmission electron microscopy. From these results, the internal stresses inherent to PVD films, the bonding states specific to sub-monolayers, and the unique film structure and the grain formation process of PVD films were discussed from the perspective of sub-monolayers. As a conclusion, we found that it is important to suppress the formation of sub-monolayers on the substrate to completely form the first layer.
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页数:6
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