Surface Modulation of SiGe by Hydrogen Plasma Process with Site Exchange Mechanism between Si and Ge

被引：0

作者：

Ishii, Yohei ^{[1
]}

Sugano, Ryoko ^{[2
]}

Lee, Yao-Jen ^{[3
]}

Wu, Wen-Fa ^{[3
]}

Maeda, Kenji ^{[4
]}

Miura, Makoto ^{[4
]}

机构：

[1] Hitachi High Tech Amer, Hillsboro, OR 97124 USA

[2] Hitachi Ltd, Chiyoda City, Japan

[3] Taiwan Semicond Res Inst, Hsinchu, Taiwan

[4] Hitachi High Tech Corp, Tokyo, Japan

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

关键词：

Plasma; Dry Etch; Hydrogen; Segregation and SiGe;

D O I：

10.1109/EDTM53872.2022.9797937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present hydrogen plasma treatment at low temperature that modulates SiGe surface. In this study, we investigated the mechanism of SiGe surface modification after hydrogen plasma exposure, which produces a Si-rich surface. We reveal the mechanism of the surface modulation, which is induced by Si surface segregation (i.e., ion-energy induced site exchange between Si and Ge across different layers). We also propose an ion-energy localization model that drives the Si segregation. Ab-initio calculation also proves how energetically favorable the site exchange is.

引用

页码：345 / 347

页数：3

共 11 条

[1]

Auth C., 2017, 2017 IEEE International Electron Devices Meeting (IEDM), p29.1.1, DOI 10.1109/IEDM.2017.8268472

[2]

Auth C., 2012, Custom Integrated Circuits Conference (CICC), 2012, P1, DOI DOI 10.1109/CICC.2012.6330657

[3] Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs [J].

Bedell, Stephen W. ;

Majumdar, Amlan ;

Ott, John A. ;

Arnold, John ;

Fogel, Keith ;

Koester, Steven J. ;

Sadana, Devendra K. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (07) :811-813

[4]

Hashemi P., 2017, INT ELECT DEVICES M, P37, DOI [10.1109/IEDM.2017.8268510, DOI 10.1109/IEDM.2017.8268510]

[5]

Hisamoto D, 2000, IEEE T ELECTRON DEV, V47, P2320, DOI 10.1109/16.887014

[6] Anisotropic selective etching between SiGe and Si [J].

Ishii, Yohei ;

Scott-McCabe, Ritchie ;

Yu, Alex ;

Okuma, Kazumasa ;

Maeda, Kenji ;

Sebastian, Joseph ;

Manos, Jim .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (06)

[7]

Lee C.H., 2016, IEDM, P766

[8] P-CHANNEL GERMANIUM MOSFETS WITH HIGH CHANNEL MOBILITY [J].

MARTIN, SC ;

HITT, LM ;

ROSENBERG, JJ .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (07) :325-326

[9]

Mertens H, 2014, S VLSI TECH, DOI 10.1109/VLSIT.2014.6894360

[10] PHOTOEMISSION INVESTIGATION OF GE AND SIGE ALLOY SURFACES AFTER REACTIVE ION ETCHING [J].

ROBEY, SW ;

BRIGHT, AA ;

OEHRLEIN, GS ;

IYER, SS ;

DELAGE, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1650-1656

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