A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band

被引：46

作者：

Do, Aaron V. ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Do, Manh Anh ^{[1
]}

Yeo, Kiat Seng ^{[1
]}

Cabuk, Alper ^{[1
]}

机构：

[1] Nanyang Technol Univ, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 02期

关键词：

front-end; low-noise amplifier (LNA); low power; subthreshold;

D O I：

10.1109/TMTT.2007.913366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The IEEE 802.15.4 standard relaxes the requirements on the receiver front-end making subthreshold operation a viable solution. The specification is discussed and guidelines are presented for a small area ultra-low-power design. A subthreshold biased low-noise amplifier (LNA) has been designed and fabricated for the 2.4-GHz IEEE 802.15.4 standard using a standard low-cost 0.18-mu m RF CMOS process. The single-stage LNA saves on chip area by using only one inductor. The measured gain is more than 20 dB with an S-11 of - 19 dB while using 630 mu A of dc current. The measured noise figure is 5.2 dB.

引用

页码：286 / 292

页数：7

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