A subthreshold low-noise amplifier optimized for ultra-low-power applications in the ISM band

被引：46
|
作者：
Do, Aaron V. [1 ]
Boon, Chirn Chye [1 ]
Do, Manh Anh [1 ]
Yeo, Kiat Seng [1 ]
Cabuk, Alper [1 ]
机构：
[1] Nanyang Technol Univ, Singapore 639798, Singapore
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 02期
关键词：
front-end; low-noise amplifier (LNA); low power; subthreshold;
D O I：
10.1109/TMTT.2007.913366
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The IEEE 802.15.4 standard relaxes the requirements on the receiver front-end making subthreshold operation a viable solution. The specification is discussed and guidelines are presented for a small area ultra-low-power design. A subthreshold biased low-noise amplifier (LNA) has been designed and fabricated for the 2.4-GHz IEEE 802.15.4 standard using a standard low-cost 0.18-mu m RF CMOS process. The single-stage LNA saves on chip area by using only one inductor. The measured gain is more than 20 dB with an S-11 of - 19 dB while using 630 mu A of dc current. The measured noise figure is 5.2 dB.
引用
收藏
页码：286 / 292
页数：7
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