Influence of the experimental procedure in the specific surface measurement by chemical dissolution of n+ nanoporous silicon

被引:3
作者
Descamps, Y [1 ]
Dufour-Gergam, E
Hatimaoui, A
机构
[1] STMicroelect, F-38926 Crolles, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] Inst Elect Fondamentale, F-91405 Orsay, France
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期
关键词
D O I
10.1002/pssa.200461178
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we used the chemical dissolution of porous silicon (PS) to determine the specific surface area of PS obtained from n(+) substrate. Two initial porosity values (62 and 39% with 1 mu m and 0.5 mu m thickness respectively) and two dissolution etchants were used. It is shown that the dissolution experimental procedure influences the extracted specific surface value. Under good dissolution conditions, we calculed 90 m(2)/cm(3) and 130 m(2)/cm(3) surface area value respectively. (c) 2005 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1543 / 1547
页数:5
相关论文
共 6 条
[1]   Rinsing and drying studies of porous silicon by high resolution X-ray diffraction [J].
Chamard, V ;
Pichat, C ;
Dolino, G .
SOLID STATE COMMUNICATIONS, 2001, 118 (03) :135-139
[2]   INFLUENCE OF WETTABILITY ON ANODIC BIAS INDUCED ELECTROLUMINESCENCE IN POROUS SILICON [J].
HALIMAOUI, A .
APPLIED PHYSICS LETTERS, 1993, 63 (09) :1264-1266
[3]  
HALIMAOUI A, IEEE EMIS DATAREVIEW
[4]   POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS [J].
HERINO, R ;
BOMCHIL, G ;
BARLA, K ;
BERTRAND, C ;
GINOUX, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :1994-2000
[5]   EXTREMELY HIGH SELECTIVE ETCHING OF POROUS SI FOR SINGLE ETCH-STOP BOND-AND-ETCH-BACK SILICON-ON-INSULATOR [J].
SAKAGUCHI, K ;
SATO, N ;
YAMAGATA, K ;
FUJIYAMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :842-847
[6]   POROUS SILICON TECHNIQUES FOR SOI STRUCTURES [J].
TSAO, SS .
IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (06) :3-7