Facile Approach for Preparing CdSe/CdTe Heterostucture Quantum Dots

被引：0
|
作者：
Rahmi, Aidhia [1 ]
Umar, Akrajas Ali [1 ]
Salleh, Muhammad Mat [1 ]
Majlis, Burhanuddin Yeop [1 ]
Yahya, Muhammad [2 ]
机构：
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, Selangor, Malaysia
[2] Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, Bangi 43600, Selangor, Malaysia
来源：
THIRD NANOSCIENCE AND NANOTECHNOLOGY SYMPOSIUM 2010 - NNSB2010 | 2010年 / 1284卷
关键词：
heterostucture; quantum dots; photoluminescence; quantum yield; NANOCRYSTALS;
D O I：
10.1063/1.3515572
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports a simple strategy to synthesize CdSe/CdTe heterostucture Quantum Dots (QDs) via successive injection of selenium and tellurium precursors into cadmium precursor at 350 degrees C. In typical process, it was found that the heterostucture QDs exhibited a totally new absorption and photoluminescence (PL) properties that are different from individual CdSe and CdTe properties. For example, its PL emissions Quantum Yield (QY) were triple of CdSe and five times of CdTe high quantum QY, the heterostucture QDs should be potential used in LED and solar cell applications.
引用
收藏
页码：97 / +
页数：2
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