Patch-clamp amplifiers on a chip

被引：24

作者：

Weerakoon, Pujitha ^{[2
]}

Culurciello, Eugenio ^{[3
]}

Yang, Youshan ^{[1
]}

Santos-Sacchi, Joseph ^{[1
,4
,5
]}

Kindlmann, Peter J. ^{[3
]}

Sigworth, Fred J. ^{[1
,2
]}

机构：

[1] Yale Univ, Dept Cellular & Mol Physiol, New Haven, CT 06520 USA

[2] Yale Univ, Dept Biomed Engn, New Haven, CT 06520 USA

[3] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[4] Yale Univ, Dept Neurobiol, New Haven, CT 06520 USA

[5] Yale Univ, Dept Surg Otolaryngol, New Haven, CT 06520 USA

来源：

JOURNAL OF NEUROSCIENCE METHODS | 2010年 / 192卷 / 02期

关键词：

Patch-clamp; Amplifier; Series resistance; Integrated circuit; Voltage clamp; ON-SAPPHIRE CMOS;

D O I：

10.1016/j.jneumeth.2010.06.030

中图分类号：

Q5 [生物化学];

学科分类号：

071010 ; 081704 ;

摘要：

We present the first, fully integrated, two-channel implementation of a patch-clamp measurement system. With this "PatchChip" two simultaneous whole-cell recordings can be obtained with rms noise of 8 pA in a 10 kHz bandwidth. The capacitance and series-resistance of the electrode can be compensated up to 10 pF and 100 M Omega respectively under computer control. Recordings of hERG and Na-v 1.7 currents demonstrate the system's capabilities, which are on par with large, commercial patch-clamp instrumentation. By reducing patch-clamp amplifiers to a millimeter size micro-chip, this work paves the way to the realization of massively parallel, high-throughput patch-clamp systems for drug screening and ion-channel research. The PatchChip is implemented in a 0.5 mu m silicon-on-sapphire process: its size is 3 x 3 mm(2) and the power consumption is 5 mW per channel with a 3.3 V power supply. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：187 / 192

页数：6

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