The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics

被引：0

作者：

Pei, D. ^{[1
,2
]}

Xue, P. ^{[1
,2
]}

Li, W. ^{[1
,2
]}

Guo, X. ^{[1
,2
]}

Lin, Y. H. ^{[3
]}

Fung, H. S. ^{[3
]}

Chen, C. C. ^{[3
]}

Nishi, Y. ^{[4
]}

Shohet, J. L. ^{[1
,2
]}

机构：

[1] Univ Wisconsin Madison, Plasma Proc & Technol Lab, Madison, WI 53706 USA

[2] Univ Wisconsin Madison, Dept Elect & Comp Engn, Madison, WI 53706 USA

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 12期

基金：

美国国家科学基金会;

关键词：

CONSTANT SICOH FILMS; K DIELECTRICS; PLASMA; DAMAGE; OXIDE; SPECTROSCOPY; RELIABILITY; ENERGY; MODEL;

D O I：

10.1063/1.4962949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the effect of vacuum ultraviolet (VUV) exposure on the time-dependent dielectric breakdown (TDDB) properties of porous low-k films was investigated. Synchrotron irradiation was used to simulate the VUV photon irradiation from processing plasmas without any particle flux. The synchrotron flux varies with the wavelength, so the irradiation time was chosen to produce the same fluence at various photon energies. The deterioration of TDDB and generation of negative mobile charge were observed in the film after exposure to the VUV photons with 9 eV or higher energy. These effects were not observed in the films exposed with 7-eV photon energies or less. The creation of paramagnetic defects was observed with the ESR measurement and believed to be the reason for TDDB degradation. Depletion of carbon and breakage and rearrangement of the Si-O-Si structure were observed and believed to be the reason for mobile charge generation and the change in TDDB, chemical, and mechanical properties. Published by AIP Publishing.

引用

页数：5

共 34 条

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