A new high resolution Random Telegraph Noise (RTN) characterization method for Resistive RAM

被引：0

作者：

Maestro, M. ^{[1
]}

Diaz, J. ^{[1
]}

Crespo-Yepes, A. ^{[1
]}

Gonzalez, M. B. ^{[2
]}

Martin-Martinez, J. ^{[1
]}

Rodriguez, R. ^{[1
]}

Nafria, M. ^{[1
]}

Campabadal, F. ^{[2
]}

Aymerich, X. ^{[1
]}

机构：

[1] UAB, Dept Elect Engn, Bellaterra, Barcelona, Spain

[2] IMB CNM CSIC, Inst Microelect Barcelona, Bellaterra, Barcelona, Spain

来源：

2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2015年

关键词：

Resistive Switching; Random Telegraph noise; resolution; time constants; RRAM;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyze RTN has a typical time resolution of similar to 2ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 mu s, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag method (W-LT) for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.

引用

页码：133 / 136

页数：4

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