Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains

被引:0
作者
Altukhov, I., V [1 ]
Dizhur, S. E. [1 ]
Kagan, M. S. [1 ]
Khvalkovskiy, N. A. [1 ]
Paprotskiy, S. K. [1 ]
Vasil'evskii, I. S. [2 ]
Vinichenko, A. N. [2 ]
机构
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Moscow 125009, Russia
[2] Natl Res Nucl Univ MEPhI, Moscow Engn Phys Inst, Moscow 115409, Russia
关键词
FIELD DOMAINS; OSCILLATIONS;
D O I
10.1134/S1064226921440017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.
引用
收藏
页码:1385 / 1387
页数:3
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