Characterization of ArF immersion process for production

被引：21

作者：

Chen, JH ^{[1
]}

Chen, LJ ^{[1
]}

Fang, TY ^{[1
]}

Fu, TC ^{[1
]}

Shiu, LH ^{[1
]}

Huang, YT ^{[1
]}

Chen, N ^{[1
]}

Oweyang, DC ^{[1
]}

Wu, MC ^{[1
]}

Wang, SC ^{[1
]}

Lin, JCH ^{[1
]}

Chen, CK ^{[1
]}

Chen, WM ^{[1
]}

Gau, TS ^{[1
]}

Lin, BJ ^{[1
]}

机构：

[1] TSMC Inc, Hsinchu 300, Taiwan

来源：

Optical Microlithography XVIII, Pts 1-3 | 2005年 / 5754卷

关键词：

193; nm; ArF lithography; immersion lithography; immersion scanner; 90; 65; bubbles; defects;

D O I：

10.1117/12.602025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

ArF immersion lithography is essential to extend optical lithography. In this study, we characterized the immersion process on production wafers. Key lithographic manufacturing parameters, overlay, CD uniformity, depth of focus (DOF), optical proximity effects (OPE), and defects are reported. Similar device electrical performance between the immersion and the dry wafers assures electrical compatibility with immersion lithography. The yield results on 90-nm Static Random Access Memory (SRAM) chips confirm doubling of DOF by immersion as expected. Poly images of the 65-nm node from a 0.85NA immersion scanner are also shown.

引用

页码：13 / 22

页数：10

共 5 条

[1] *ISMT, 2004, INT S IMM 157 NM LIT
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[3] Immersion lithography and its impact on semiconductor manufacturing
Lin, BJ
[J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (03): : 377 - 395
[4] Benefits and limitations of immersion lithography
Mulkens, J
Flagello, D
Streefkerk, B
Graeupner, P
[J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (01): : 104 - 114
[5] Extending optical lithography with immersion
Streefkerk, B
Baselmans, J
Gehoel-van Ansem, W
Mulkens, J
Hoogendam, C
Hoogendorp, M
Flagello, D
Sewell, H
Graeupner, P
[J]. OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 285 - 305

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