Monte Carlo Studies of Hot Electron Transport and High Field Degradation

被引：0
|
作者：
Sun, Ying [1 ]
Boggs, S. A. [1 ,2 ,3 ]
Ramprasad, R. [1 ,2 ,4 ]
机构：
[1] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[2] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[3] Univ Connecticut, Dept Elect Engn, Storrs, CT 06269 USA
[4] Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
来源：
2014 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (CEIDP) | 2014年
关键词：
Electons; Monte Carlo; Breakdown; Degradation; POLYETHYLENE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The problem of hot electron transport and energy loss at high electric fields in insulators is of considerable interest in the context of dielectric breakdown and hot carrier induced degradation. Hot electron transport is discussed in terms of electron-phonon scattering in polymeric dielectrics. Monte Carlo (MC) simulation provides the basis for study of hot electron transport in thin polyethylene (PE) films. Electron trajectories and spatial evolution of the electron energy distribution are presented. Possible molecular degradation mechanisms are discussed.
引用
收藏
页码：15 / 18
页数：4
相关论文
共 50 条
  • [1] Monte Carlo Studies of Hot Electron Transport in Insulating Films with Nanocavities
    Sun, Ying
    Boggs, S. A.
    Ramprasad, R.
    PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL CONFERENCE ON SOLID DIELECTRICS (ICSD 2013), VOLS 1 AND 2, 2013, : 611 - 614
  • [2] Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs
    Wang, Mingyan
    Lv, Yuanjie
    Wen, Zuokai
    Zhou, Heng
    Cui, Peng
    Lin, Zhaojun
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (12) : 2041 - 2044
  • [3] Improved algorithm for Monte Carlo studies of electron transport in degenerate semiconductors
    Borowik, P
    Adamowicz, L
    PHYSICA B-CONDENSED MATTER, 2005, 365 (1-4) : 235 - 239
  • [4] Monte Carlo study of low and high-field electron transport in GaN-based heterostructures
    Thobel, J. -L.
    Dessenne, F.
    Dalle, C.
    2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2014,
  • [5] Monte Carlo modeling of hot electron transport in bulk AlAs, AlGaAs and GaAs at room temperature
    Arabshahi, H.
    Khalvati, M. R.
    Rokn-Abadi, M. Rezaee
    MODERN PHYSICS LETTERS B, 2008, 22 (18): : 1777 - 1784
  • [6] Monte Carlo study of electron transport in a carbon nanotube
    Pennington, G
    Goldsman, N
    IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (03): : 372 - 378
  • [7] Evaluation of the electron transport algorithm in magnetic field in EGS5 Monte Carlo code
    Ito, Kengo
    Kadoya, Noriyuki
    Katsuta, Yoshiyuki
    Tanaka, Shohei
    Dobashi, Suguru
    Takeda, Ken
    Jingu, Keiichi
    PHYSICA MEDICA-EUROPEAN JOURNAL OF MEDICAL PHYSICS, 2022, 93 : 46 - 51
  • [8] Simulation of Electron Transport in Silicon using Monte Carlo Method
    Wang, Zan
    Quan, Lei
    Ruan, Yiwu
    MATERIALS AND DESIGN, PTS 1-3, 2011, 284-286 : 871 - +
  • [9] Monte Carlo study of electron transport in zincblende and wurtzite InN
    Akarsu, M.
    Karakaya, S.
    Aydogu, S.
    Ozbas, O.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (5-6): : 534 - 537
  • [10] Single Scattering Adjoint Monte Carlo Electron Transport in FRENSIE
    Kersting, Luke J.
    Robinson, Alex
    Moll, Eli
    Britt, Philip
    Gross, Lewis
    Henderson, Douglass
    NUCLEAR SCIENCE AND ENGINEERING, 2020, 194 (05) : 350 - 372
12345