Effect of swift heavy ion irradiation on bismuth doped BaS nanostructures

被引：8

作者：

Singh, Surender ^{[1
]}

Kumar, Ravi ^{[2
]}

Singh, Nafa ^{[1
]}

机构：

[1] Kurukshetra Univ, Dept Phys, Kurukshetra 136119, Haryana, India

[2] Natl Inst Technol Hamirpur, Ctr Mat Sci & Engn, Hamirpur, HP, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 05期

关键词：

Swift heavy ion; Defects; Thermal spike; TRANSIENT THERMAL-PROCESS; SULFIDE THIN-FILMS; PHOTOLUMINESCENCE; SOLIDS; METALS; OXIDE; BEAM; CAS;

D O I：

10.1016/j.jallcom.2010.11.103

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the use of swift heavy ion irradiation as a means to tailor the luminescence properties of bismuth doped barium sulphide nanostructures. The samples were irradiated with 120 MeV Ni+9 ions at three different fluences of 1 x 10(12), 5 x 10(12), and 1 x 10(13) ion/cm(2). Structural and optical properties of pristine and irradiated samples were carried out using X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) and UV-vis spectroscopy. X-ray diffraction (XRD) studies were used to estimate the average size of nanoparticles. The average size of the crystallites is estimated from the line widths of the diffraction pattern, while the exact size of the crystallites is estimated from the TEM micrographs. After irradiation with a fluence of 1 x 10(13) ion/m(2) the photoluminescence intensity increases by 42%. The indirect band gap of BaS:Bi is increased after ion irradiation.(C) 2010 Elsevier B.V. All rights reserved.

引用

页码：L81 / L84

页数：4

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