Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

被引：31

作者：

Iida, Daisuke ^{[1
]}

Tamura, Kenta ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Amano, Hiroshi ^{[2
]}

Akasaki, Isamu ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 21期

基金：

日本学术振兴会;

关键词：

Crystal structure; Doping; Nitrides; Semiconducting gallium compounds; P-TYPE CONDUCTION; SAPPHIRE SUBSTRATE; QUANTUM-WELLS; HETEROSTRUCTURES; BAND;

D O I：

10.1016/j.jcrysgro.2010.07.038

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The electrical and optical properties of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concentrations are above 1 x 10(20) cm(-3) and 5 x 10(19) cm(-3), respectively. The electrical properties also indicate the existence of compensating donors because the hole concentration decreases at such high Mg doping concentrations. In addition, we estimated the N-D/N-A compensation ratio of a- and c-plane GaN by variable-temperature Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3131 / 3135

页数：5

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