Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

被引：46

作者：

Wang, Di ^{[1
]}

He, Linan ^{[1
]}

Le, Yong ^{[1
]}

Feng, Xianjin ^{[1
]}

Luan, Caina ^{[1
]}

Xiao, Hongdi ^{[1
]}

Ma, Jin ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2020年 / 46卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Ga2O3; Epitaxial growth; MOCVD; Annealing; OPTICAL-PROPERTIES; THIN-FILMS;

D O I：

10.1016/j.ceramint.2019.10.185

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium oxide (Ga2O3) films have been deposited on SrTiO3 (100) substrates by using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition annealing was performed at different temperatures. XRD theta-2 theta scans displayed that the annealing at 1000 degrees C leaded to beta phase Ga2O3 film with the best crystalline quality. Microstructural and chemical composition analyses revealed that this film was single crystal beta-Ga2O3 with stoichiometric ratio. The epitaxial relationships were clearly determined asp-Ga2O3 (100) parallel to SrTiO3 (100) with beta-Ga2O3 [001] parallel to SrTiO3 < 011 > . All of the prepared Ga2O3 samples have average transmittances in the visible range of more than 70%.

引用

页码：4568 / 4572

页数：5

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