Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO2/Si

We present the heterogeneous integration of a 3.8 mu m thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 mu m thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at similar to 997 nm and a threshold current density of 250 A/cm(2).