Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through-Silicon Vias

被引：5
作者：
Liu, Xi [1 ,2 ]
Thadesar, Paragkumar A. [2 ]
Taylor, Christine L. [1 ]
Kunz, Martin [3 ]
Tamura, Nobumichi [3 ]
Bakir, Muhannad S. [2 ]
Sitaraman, Suresh K. [1 ]
机构：
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
来源：
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2016年 / 6卷 / 07期
关键词：
Copper pumping; finite-element analysis; synchrotron X-ray diffraction; through-silicon vias (TSVs); TSV; WAFER;
D O I：
10.1109/TCPMT.2015.2507164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a 3-D thermomechanical model of through-silicon vias (TSVs) has been analyzed and verified with in situ microscale strain measurements by synchrotron X-ray microdiffraction. Thereafter, a comprehensive stress/strain analysis on copper pumping and back-end-of-line (BEOL) cracking issues has been carried out. In addition, a design-of-experiments-based approach has been used to understand the effect of various parameters on copper pumping and BEOL stress. The results show that the smaller TSV diameter and thinner silicon die help reduce the copper pumping and thus mitigate BEOL stress.
引用
收藏
页码：995 / 1001
页数：7
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