Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through-Silicon Vias

被引：5
作者：
Liu, Xi [1 ,2 ]
Thadesar, Paragkumar A. [2 ]
Taylor, Christine L. [1 ]
Kunz, Martin [3 ]
Tamura, Nobumichi [3 ]
Bakir, Muhannad S. [2 ]
Sitaraman, Suresh K. [1 ]
机构：
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
来源：
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2016年 / 6卷 / 07期
关键词：
Copper pumping; finite-element analysis; synchrotron X-ray diffraction; through-silicon vias (TSVs); TSV; WAFER;
D O I：
10.1109/TCPMT.2015.2507164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a 3-D thermomechanical model of through-silicon vias (TSVs) has been analyzed and verified with in situ microscale strain measurements by synchrotron X-ray microdiffraction. Thereafter, a comprehensive stress/strain analysis on copper pumping and back-end-of-line (BEOL) cracking issues has been carried out. In addition, a design-of-experiments-based approach has been used to understand the effect of various parameters on copper pumping and BEOL stress. The results show that the smaller TSV diameter and thinner silicon die help reduce the copper pumping and thus mitigate BEOL stress.
引用
收藏
页码：995 / 1001
页数：7
相关论文
共 50 条
  • [1] Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias
    Su, Fei
    Pan, Xiaoxu
    Huang, Pengfei
    Guan, Yong
    Chen, Jing
    Ma, Shenglin
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2016, 6 (08): : 1221 - 1225
  • [2] Heating Rate Dependence of the Mechanisms of Copper Pumping in Through-Silicon Vias
    Yang, Hanry
    Lee, Tae-Kyu
    Meinshausen, Lutz
    Dutta, Indranath
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (01) : 159 - 169
  • [3] Heating Rate Dependence of the Mechanisms of Copper Pumping in Through-Silicon Vias
    Hanry Yang
    Tae-Kyu Lee
    Lutz Meinshausen
    Indranath Dutta
    Journal of Electronic Materials, 2019, 48 : 159 - 169
  • [4] Influence of temperature on pumping rate and crystalline grain of copper filler in through-silicon vias
    Pan, Xiaoxu
    Huang, Pengfei
    Su, Fei
    Guan, Yong
    Ma, Shenglin
    Chen, Jing
    2016 17TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2016, : 1280 - 1283
  • [5] RF Characterization and Modeling of Through-Silicon Vias
    Sun, X.
    Ryckaert, J.
    Van der Plas, G.
    Beyne, E.
    2013 EUROPEAN MICROELECTRONICS PACKAGING CONFERENCE (EMPC), 2013,
  • [6] Integrated experimental and computational approach for residual stress investigation near through-silicon vias
    Deluca, Marco
    Hammer, Rene
    Keckes, Jozef
    Kraft, Jochen
    Schrank, Franz
    Todt, Juraj
    Robach, Odile
    Micha, Jean- Sebastien
    Defregger, Stefan
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (19)
  • [7] Copper Pumping of Through Silicon Vias in Reliability Test
    Jing, Xiangmeng
    Niu, Zhongcai
    Hao, Hu
    Zhang, Wenqi
    Lee, Ui-hyoung
    2015 16TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, 2015,
  • [8] Effect of Scaling Copper Through-Silicon Vias on Stress and Reliability for 3D Interconnects
    Spinella, Laura
    Park, Miseok
    Im, Jang-Hi
    Ho, Paul
    Tamura, Nobumichi
    Jiang, Tengfei
    2016 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC), 2016, : 80 - 82
  • [9] Electrical Modeling and Analysis of Polymer-Cavity Through-Silicon Vias
    Liu, Xiaoxian
    Zhu, Zhangming
    Yang, Yintang
    Lu, Qijun
    Yin, Xiangkun
    Liu, Yang
    2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS), 2017,
  • [10] Effects of additives with different acids on the through-silicon vias copper filling
    Wang, Fuliang
    Liu, Wei
    Wang, Yan
    MICROELECTRONIC ENGINEERING, 2018, 200 : 51 - 55
12345