Bistable resistance memory switching effect in amorphous InGaZnO thin films

被引：38
作者：
Kim, C. H. [1 ]
Jang, Y. H. [1 ]
Hwang, H. J. [1 ]
Song, C. H. [2 ]
Yang, Y. S. [2 ]
Cho, J. H. [1 ]
机构：
[1] Pusan Natl Univ, RCDAMP, Dept Phys Educ, Pusan 609735, South Korea
[2] Pusan Natl Univ, Dept Nano Fus Technol, Pusan 609735, South Korea
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期
关键词：
amorphous semiconductors; electric properties; electrochemical electrodes; interface states; pulsed laser deposition; semiconductor thin films; TRANSPARENT;
D O I：
10.1063/1.3479527
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a bistable resistance switching effect in amorphous InGaZnO (a-IGZO) thin films deposited by a pulsed laser deposition method. The electrical properties of a-IGZO thin films were controlled by the oxygen partial pressure during deposition and this determined the resistance switching effect. We also observed the resistance switching effect with various electrodes such as Pt, Au, and Al. We suggest that the resistance switching effect is related to the formation of a conducting path by metal and/or oxygen vacancy defects in the a-IGZO matrix.
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页数：3
相关论文
共 21 条
[1]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[2]   Multilevel unipolar resistance switching in TiO2 thin films [J].
Chae, S. C. ;
Lee, J. S. ;
Choi, W. S. ;
Lee, S. B. ;
Chang, S. H. ;
Shin, H. ;
Kahng, B. ;
Noh, T. W. .
APPLIED PHYSICS LETTERS, 2009, 95 (09)
[3]   Local structure and conduction mechanism in amorphous In-Ga-Zn-O films [J].
Cho, Deok-Yong ;
Song, Jaewon ;
Na, Kwang Duk ;
Hwang, Cheol Seong ;
Jeong, Jong Han ;
Jeong, Jae Kyeong ;
Mo, Yeon-Gon .
APPLIED PHYSICS LETTERS, 2009, 94 (11)
[4]   Bulk-limited current conduction in amorphous InGaZnO thin films [J].
Chung, Hyun-Joong ;
Jeong, Jong Han ;
Ahn, Tae Kyung ;
Lee, Hun Jung ;
Kim, Minkyu ;
Jun, Kyungjin ;
Park, Jin-Seong ;
Jeong, Jae Kyeong ;
Mo, Yeon-Gon ;
Kim, Hye Dong .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (03) :H51-H54
[5]   CHARACTERIZATION OF INTRINSIC AND IMPURITY DEEP LEVELS IN ZNSE AND ZNO CRYSTALS BY NONLINEAR SPECTROSCOPY [J].
GAVRYUSHIN, V ;
RACIUKAITIS, G ;
JUODZBALIS, D ;
KAZLAUSKAS, A ;
KUBERTAVICIUS, V .
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :924-933
[6]   The properties of transparent conductive In-Ga-Zn oxide films produced by pulsed laser deposition [J].
Inoue, Kenichi ;
Tominaga, Kikuo ;
Tsuduki, Takashi ;
Mikawa, Michio ;
Moriga, Toshihiro .
VACUUM, 2008, 83 (03) :552-556
[7]   Observation of bistable resistance memory switching in CuO thin films [J].
Kim, C. H. ;
Jang, Y. H. ;
Hwang, H. J. ;
Sun, Z. H. ;
Moon, H. B. ;
Cho, J. H. .
APPLIED PHYSICS LETTERS, 2009, 94 (10)
[8]  
Lampert M.A., 1970, Current Injection in Solids
[9]   Nanoscale current modulations in Pr0.7Ca0.3MnO3 thin films [J].
Moon, Hak B. ;
Kim, Cheol H. ;
Ahn, Jai S. ;
Cho, Jin H. .
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (48) :24277-24280
[10]   High-field conduction in barium titanate [J].
Morrison, FD ;
Zubko, P ;
Jung, DJ ;
Scott, JF ;
Baxter, P ;
Saad, MM ;
Bowman, RM ;
Gregg, JM .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
123