Thick AlN layers grown by HVPE

被引：68

作者：

Kovalenkov, O ^{[1
]}

Soukhoveev, V ^{[1
]}

Ivantsov, V ^{[1
]}

Usikov, A ^{[1
]}

Dmitriev, V ^{[1
]}

机构：

[1] Technol & Devices Int Inc, Silver Spring, MD 20904 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 01期

关键词：

substrates; hydride vapor phase epitaxy; nitrides; dielectric materials;

D O I：

10.1016/j.jcrysgro.2005.03.054

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Properties of aluminum nitride layers grown by hydride vapor phase epitaxy (HVPE) on 2 in sapphire and silicon carbide (SiC) substrates are described. Thickness of grown AlN layers ranged from 1 to 20 mu m for the material grown on sapphire and from 5 to 75 mu m for the material grown on SiC. The layers were free of cracks. Surface morphology, crystal quality, electrical resistivity, and optical transparency of grown AlN layers were studied. 2 in free-standing AlN wafers were fabricated. (c) 2005 Published by Elsevier B.V.

引用

页码：87 / 92

页数：6

共 21 条

[1] INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AIN [J].

AKASAKI, I ;

HASHIMOTO, M .

SOLID STATE COMMUNICATIONS, 1967, 5 (11) :851-+

[2]

Albrecht M, 1999, PHYS STATUS SOLIDI A, V176, P453, DOI 10.1002/(SICI)1521-396X(199911)176:1<453::AID-PSSA453>3.0.CO

[3]

2-M

[4] GROWTH, CRYSTALLOGRAPHIC AND ELECTRICAL ASSESSMENT OF EPITAXIAL LAYERS OF ALUMINUM NITRIDE ON CORUNDUM SUBSTRATES [J].

CALLAGHAN, MP ;

PATTERSON, E ;

RICHARDS, BP ;

WALLACE, CA .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (02) :85-98

[5]

FLORESCU DI, 2001, COMPOUND SEMICOND, V7, P61

[6] ,Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth [J].

Kumagai, Y ;

Yamane, T ;

Miyaji, T ;

Murakami, H ;

Kangawa, Y ;

Koukitu, A .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2498-2501

[7]

LAM JB, 2001, MAT RES SOC S P, V639

[8] High breakdown M-I-M structures on bulk AlN [J].

Luo, B ;

Johnson, JW ;

Kryliouk, O ;

Ren, F ;

Pearton, SJ ;

Chu, SNG ;

Nikolaev, AE ;

Melnik, YV ;

Dmitriev, VA ;

Anderson, TJ .

SOLID-STATE ELECTRONICS, 2002, 46 (04) :573-576

[9] Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors [J].

Mastro, MA ;

Tsvetkov, D ;

Soukhoveev, V ;

Usikov, A ;

Dmitriev, V ;

Luo, B ;

Ren, F ;

Baik, KH ;

Pearton, SJ .

SOLID-STATE ELECTRONICS, 2003, 47 (06) :1075-1079

[10]

Melnik Y, 2001, PHYS STATUS SOLIDI A, V188, P463, DOI 10.1002/1521-396X(200111)188:1<463::AID-PSSA463>3.0.CO

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