Strain-driven self-positioning of micromachined structures

被引:123
|
作者
Vaccaro, PO [1 ]
Kubota, K [1 ]
Aida, T [1 ]
机构
[1] ATR, Adapt Commun Res Labs, Kyoto 6190288, Japan
关键词
D O I
10.1063/1.1371525
中图分类号
O59 [应用物理学];
学科分类号
摘要
We introduce a method to make self-positioned micromachined structures by using the strain in a pair of lattice-mismatched epitaxial layers. This method allows the fabrication of simple and robust hinges for movable parts, and it can be applied to any pair of lattice-mismatched epitaxial layers, in semiconductors or metals. As an application example, a standing mirror was fabricated. A multilayer structure including an AlGaAs/GaAs dielectric mirror and an InGaAs strained layer was grown by molecular-beam epitaxy on a GaAs substrate. After releasing the multilayer structure from the substrate by selective etching, it moved to its final position powered by the strain release in the InGaAs layer. (C) 2001 American Institute of Physics.
引用
收藏
页码:2852 / 2854
页数:3
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