Terahertz stimulated emission from strained p-Ge and SiGe/Si structures

被引：0
作者：
Kagan, MS
Altukhov, IV
Sinis, VP
Chirkova, EG
Yassievich, IN
Kolodzey, J
机构：
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2003年 / 48卷 / 09期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nature and properties of terahertz (THz) stimulated emission from uniaxially compressed p-Ge and strained SiGe/Si structures doped with shallow acceptors are discussed. This emission is attributed to stimulated optical transitions between resonant and localized acceptor states.
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页码：1047 / 1054
页数：8
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