Preparation and structure and optical-electrical properties of the Nb/SnO2 composite thin film

被引:6
作者
Zeng Le-Gui [1 ,2 ]
Liu Fa-Min [1 ]
Zhong Wen-Wu [1 ]
Ding Peng [1 ]
Cai Lu-Gang [1 ]
Zhou Chuan-Cang [1 ]
机构
[1] Beijing Univ Aeronaut & Astronaut, Minist Educ, Key Lab Micronano Measurement Manipulat & Phys, Sch Phys & Nucl Energy Engn,Dept Phys, Beijing 100191, Peoples R China
[2] Acad Armored Forces Engn, Dept Fundamental Courses, Beijing 100072, Peoples R China
关键词
sol-gel; Nb/SnO2 composite thin films; structure characterization; optical-electrical properties; DOPED SNO2; ANTIMONY;
D O I
10.7498/aps.60.038203
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The Nb/SnO2 composite thin films were successfully synthesized by sol-gel spin-coating method on glass substrate. The structures and properties of Nb/SnO2 composite thin films were characterized by X-ray diffraction (XRD), scanning electron microscopey (SEM), ultraviolet visible near-infrared spectrophotometry and four-probe method. The effects of Nb doping on structure and optical-electrical properties of the Nb/SnO2 composite thin films were researched. The results indicate that a tetragonal rutile structure is retained when the Nb content is less than 0. 99at%, and the nano-particles are distributed homogeneously in the thin films and their size can be controlled in the range of 5-7 nm. The resistivity of Nb/ SnO2 composite thin films decreases and then increases when the Nb content is less than 0. 99at%, and reaches a very low value of 9.49 x 10(-2) Omega.cm at 0. 37at% Nb. In the range of 400-700 nm visible region, the transmittance of Nb/SnO2 composite thin films is up to 90% when the Nb content is less than O. 99at%, and the optical band gap of Nb/SnO2 composite thin films are in the range of 3. 9-4. 1 eV. The visible light transmittance of Nb/SnO2 composite thin films significantly reduce at 1. 23at% Nb.
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页数:6
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