Identification of ultra-fine Ti-rich precipitates in V-Cr-Ti alloys irradiated below 300 °C by using positron CDB technique

被引：11

作者：

Fukumoto, Ken-ichi ^{[1
]}

Matsui, Hideki ^{[2
]}

Ohkubo, Hideaki ^{[3
]}

Tang, Zheng ^{[2
]}

Nagai, Yasuyoshi ^{[4
]}

Hasegawa, Masayuki ^{[4
]}

机构：

[1] Univ Fukui, Grad Sch Nucl Power & Energy Safety Engn, Fukui 9108507, Japan

[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan

[3] Kyoto Univ, Inst Adv Energy, Uji 6110011, Japan

[4] Tohoku Univ, Int Res Ctr Nucl Mat Sci, Oarai, Ibaraki 311313, Japan

来源：

JOURNAL OF NUCLEAR MATERIALS | 2008年 / 373卷 / 1-3期

关键词：

D O I：

10.1016/j.jnucmat.2007.06.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Irradiation-induced Ti-rich precipitates in V-Ti and V-4Cr-4Ti alloys are studied by TEM and positron annihilation methods (positron lifetime, and coincidence Doppler broadening (CDB)). The characteristics of small defect clusters formed in V alloys containing Ti at irradiation temperatures below 300 degrees C have not been identified by TEM techniques. Strong interaction between vacancy and Ti solute atoms for irradiated V alloys containing Ti at irradiation temperatures from 220 to 350 degrees C are observed by positron lifetime measurement. The vacancy-multi Ti solute complexes in V-alloys containing Ti are definitely identified by using CDB measurement. It is suggested that ultra-fine Ti-rich precipitates or Ti segregation at periphery of dislocation loops are formed in V alloys containing Ti at irradiation temperatures below 300 degrees C. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：289 / 294

页数：6

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