Influence of co-catalyst on growth of carbon nanotubes using alcohol catalytic CVD method

被引:11
|
作者
Izak, T.
Danis, T.
Vesely, M.
Marton, M.
Michalka, M.
机构
[1] Slovak Tech Univ Bratislava, Fac Elect Engn & Informat Technol, Dept Microelect, Bratislava 81219, Slovakia
[2] Slovak Tech Univ Bratislava, Fac Elect Engn & Informat Technol, Ctr Int Laser, Bratislava 81219, Slovakia
关键词
carbon nanotubes; ACCVD; catalyst growth; SEM; raman spectroscopy;
D O I
10.1016/j.vacuum.2007.07.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper describes the influence of a co-catalyst on growth of carbon nanotubes (CNTs) by alcohol catalytic chemical vapour deposition (ACCVD) method. Silicon wafers covered with thermal oxide or polycrystalline diamond thin film were used as substrates. Ni thin film supported with Al, Cu or Ti was used as a catalyst. The films were deposited by pulsed laser deposition technique. Comparison of the various types of the co-catalyst (Al, Cu, Ti) leads to the conclusion that Cu co-catalyst is suitable for producing very thin single wall carbon nanotubes (SWCNTs) and combination of Al and Ni provide a good condition to the catalytic growth of CNTs. In addition, we observed also the influence of the various diffusion barriers (thermal oxide and polycrystalline diamond) on growth of CNTs. Prepared samples were analysed by Raman spectroscopy (RS) and scanning electron microscopy (SEM). (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:134 / 137
页数:4
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