High-performance GaN p-n junction photodetectors for solar ultraviolet applications

被引：216

作者：

Monroy, E ^{[1
]}

Munoz, E

Sanchez, FJ

Calle, F

Calleja, E

Beaumont, B

Gibart, P

Munoz, JA

Cusso, F

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

[2] CNRS, CRHEA, F-06560 Valbonne, France

[3] Univ Autonoma Madrid, Dept Fis Mat, Madrid, Spain

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 09期

关键词：

D O I：

10.1088/0268-1242/13/9/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and characterization of ultraviolet photodetectors based on GaN p-n junctions is reported. The devices are grown by metalorganic vapour phase epitaxy on basal-plane sapphire substrates. These detectors are visible-blind with a sharp wavelength cut-off at 360 nm. The photocurrent is linear with incident power from 10 mW m(-2) up to 2 kW m(-2), with a responsivity of 145 mA W-1 at 360 nm. The device time response is dominated by the effective resistance-capacitance time constant, and a 105 ns response is estimated for very low load resistances. A comparison with the response of GaN photoconductor detectors is also presented. The application of these high-performance photodetectors for solar ultraviolet monitoring is described.

引用

页码：1042 / 1046

页数：5

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