Low-loss GaN-on-insulator platform for integrated photonics

被引：12
作者：
Gromovyi, M. [1 ]
El Kurdi, M. [1 ]
Checoury, X. [1 ]
Herth, E. [1 ]
Tabataba-Vakili, F. [1 ,3 ,4 ]
Bhat, N. [2 ]
Courville, A. [2 ]
Semond, F. [2 ]
Boucaud, P. [2 ]
机构：
[1] Univ Paris Saclay, C2N, CNRS, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France
[2] Univ Cote dAzur, CNRS, CRHEA, Rue Bernard Gregory, F-06905 Sophia Antipolis, France
[3] Ludwig Maximilians Univ Munchen, Munich Ctr Quantum Sci & Technol MCQST, Fak Phys, Geschwister Scholl Pl 1, D-80539 Munich, Germany
[4] Ludwig Maximilians Univ Munchen, Ctr NanoSci CeNS, Geschwister Scholl Pl 1, D-80539 Munich, Germany
来源：
OPTICS EXPRESS | 2022年 / 30卷 / 12期
关键词：
2ND-HARMONIC GENERATION; FREQUENCY COMB; WAVE-GUIDE;
D O I：
10.1364/OE.461138
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultra-violet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material on SiO2 is achieved through wafer bonding. We show that quality factors up to 230 000 can be achieved with this platform at telecommunication wavelengths. Resonant second harmonic generation is demonstrated with a continuous wave conversion efficiency of 0.24 %/W. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码：20737 / 20749
页数：13
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