Power and pressure effects upon magnetron sputtered aluminum doped ZnO films properties

被引:93
作者
Rahmane, S. [1 ,2 ]
Djouadi, M. A. [2 ]
Aida, M. S. [3 ]
Barreau, N. [4 ]
Abdallah, B. [2 ]
Zoubir, N. Hadj [5 ]
机构
[1] Univ Biskra, Lab Chim Appl, Biskra 07000, Algeria
[2] Univ Nantes, Inst Mat Jean Rouxel IMN UMR 6502, F-44322 Nantes, France
[3] Univ Mentouri, Lab Couches Minces & Interfaces, Constantine 25000, Algeria
[4] Univ Nantes, Lab Mat Photovolta, F-44322 Nantes, France
[5] Univ Ibn Khaldoun, Lab Genie Phys, Tiaret 14000, Algeria
关键词
Magnetron sputtering; Al-doped zinc oxide; X-ray diffraction; Transmission electron microscopy; THIN-FILMS; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; TRANSPARENT; AL; DEPOSITION;
D O I
10.1016/j.tsf.2010.06.063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, polycrystalline aluminum doped zinc oxide (ZnO:Al) films with c-axis (002) orientation have been grown on glass and silicon substrates by RF (radio frequency) magnetron sputtering technique, at room temperature. A systematic study of the effect of sputtering deposition parameters (i.e. RF power and argon gas pressure) on the structural, optical and electrical properties of the films was carried out. We observed that, with increasing RF power the growth rate increased, while it decreased with increasing gas pressure. As mentioned above, the films were polycrystalline in nature with a strong preferred (002) orientation. The intrinsic compressive stress was found to decrease with both increasing RF power and gas pressure, and near stress-free film was obtained at 200 W RF power and 2 x 10(-1) Pa gas pressure. The obtained ZnO:Al films, not only have an average transmittance greater than 90% in the visible region, but also have an optical band gap between 3.33 and 3.47 eV depending on the sputtering parameters. Moreover, a low value of the electrical resistivity (similar to 1.25 x 10(-3) Omega cm) was obtained for the film deposited at 200 W and 2 x 10(-3) mbar. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:5 / 10
页数:6
相关论文
共 31 条
[1]   Deposition of AlN films by reactive sputtering: Effect of radio frequency substrate bias [J].
Abdallah, B. ;
Chala, A. ;
Jouan, P.-Y ;
Besland, M. P. ;
Djouadi, M. A. .
THIN SOLID FILMS, 2007, 515 (18) :7105-7108
[2]   Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition [J].
Agura, H ;
Suzuki, A ;
Matsushita, T ;
Aoki, T ;
Okuda, M .
THIN SOLID FILMS, 2003, 445 (02) :263-267
[3]   PHOTO-VOLTAIC PROPERTIES OF ZNO-CDTE HETEROJUNCTIONS PREPARED BY SPRAY PYROLYSIS [J].
ARANOVICH, JA ;
GOLMAYO, D ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4260-4268
[4]   Preparation and characterization of transparent ZnO thin films obtained by spray pyrolysis [J].
Ayouchi, R ;
Leinen, D ;
Martín, F ;
Gabas, M ;
Dalchiele, E ;
Ramos-Barrado, JR .
THIN SOLID FILMS, 2003, 426 (1-2) :68-77
[5]   Structural, optical and cathodoluminescence characteristics of undoped and tin-doped ZnO thin films prepared by spray pyrolysis [J].
Bougrine, A ;
El Hichou, A ;
Addou, M ;
Ebothé, J ;
Kachouane, A ;
Troyon, M .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 80 (02) :438-445
[6]   Microstructures and electrical properties of V2O5-based multicomponent ZnO varistors prepared by microwave sintering process [J].
Chen, CS ;
Kuo, CT ;
Wu, TB ;
Lin, IN .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3A) :1169-1175
[7]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[8]   CHARACTERISTICS OF HIGH-QUALITY ZNO THIN-FILMS DEPOSITED BY PULSED-LASER DEPOSITION [J].
CRACIUN, V ;
ELDERS, J ;
GARDENIERS, JGE ;
BOYD, IW .
APPLIED PHYSICS LETTERS, 1994, 65 (23) :2963-2965
[9]   Influence of target-to-substrate distance on the properties of AZO films grown by RF magnetron sputtering [J].
Jeong, SH ;
Boo, JH .
THIN SOLID FILMS, 2004, 447 :105-110
[10]   OPTICAL-PROPERTIES OF SPUTTER-DEPOSITED ZNO-AL THIN-FILMS [J].
JIN, ZC ;
HAMBERG, I ;
GRANQVIST, CG .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5117-5131