GalnAs/AlGaAsSb quantum-cascade lasers -: art. no. 131109

被引：17

作者：

Yang, Q ^{[1
]}

Manz, C ^{[1
]}

Bronner, W ^{[1
]}

Kirste, L ^{[1
]}

Köhler, K ^{[1
]}

Wagner, J ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 13期

关键词：

D O I：

10.1063/1.1896447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quaternary-barrier-containing GaInAs/AlGaAsSb quantum-cascade lasers, motivated by reducing the barrier height compared to that in GaInAs/AlAsSb quantum-cascade lasers, have been demonstrated. The design of these quaternary-barrier-containing lasers is based on triple-quantum-well vertical-transition active regions, and their fabrication relies on molecular-beam-epitaxial growth of Ga0.47In0.53As/AlGaAs1-xSbx (x close to 0.45) heterostructures on n-InP substrates. Including twenty-five periods of active regions and injection regions, the quantum-cascade lasers operate up to T >= 400 K in pulsed mode, with an emission wavelength of about 4.9 mu m at room temperature. The characteristic temperature T-o of the threshold current density is 169 K in the temperature range between 280 and 400 K. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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