Ultra-low thermal conductivity through the reduced phonon lifetime by microstructural and Umklapp scattering in Sn1-xMnxSe nanostructures

被引:10
作者
Monikapani, K. [1 ]
Vijay, V. [1 ]
Harish, S. [1 ]
Archana, J. [1 ]
Muthamizhchelvan, C. [1 ]
Navaneethan, M. [1 ,2 ,3 ]
机构
[1] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Chennai 603203, India
[2] SRM Inst Sci & Technol, Fac Engn & Technol, Nanotechnol Res Ctr NRC, Chennai 603203, India
[3] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, India
关键词
Polycrystalline SnSe; Microstructural defects; Dislocations; Grain boundary scattering; Point defect scattering; THERMOELECTRIC PERFORMANCE; TRANSPORT-PROPERTIES; SNSE; GROWTH; BAND;
D O I
10.1016/j.jallcom.2022.165152
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Tin selenide (SnSe), a layered material with low thermal conductivity high thermoelectric properties, has recently attracted a lot of attention in the field of thermoelectrics. Herein, Sn1-xMnxSe is prepared by single-step hydrothermal route and the effect of Mn on the TE properties of SnSe compound were investigated. The formation of orthorhombic crystal structure is confirmed by X-ray diffraction (XRD) pattern. High crystalline nature of the sample and nanoparticles formation is observed in high resolution transmission electron microscopy (HRTEM). Thermal conductivity is obtained in the temperature range from 303 K to 653 K. The effect of Mn substitution leads to low thermal conductivity of 0.204 W/mK at 653 K, due to the shortened phonon lifetime through the various scattering mechanisms. This result demonstrates that the introduction of Mn substitution in SnSe can effectively lift the thermoelectric performance of poly-crystalline SnSe via reduced thermal conductivity.(C) 2022 Elsevier B.V. All rights reserved.
引用
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页数:9
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