Photoinduced resistivity changes in Bi0.4Ca0.6MnO3 thin films -: art. no. 071922

被引：22

作者：

Smolyaninova, VN ^{[1
]}

Rajeswari, M

Kennedy, R

Overby, M

Lofland, SE

Chen, LZ

Greene, RL

机构：

[1] Towson Univ, Dept Phys Astron & Geosci, Towson, MD 21252 USA

[2] Rowan Univ, Ctr Mat Res & Educ, Dept Chem & Phys, Glassboro, NJ 08028 USA

[3] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[4] Univ Maryland, Ctr Supercond Res, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1868869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report charge-ordered Bi-0.4,Ca0.6MnO3 thin films with charge-ordering temperature near room temperature, and observation of large photoinduced resistivity changes in these films associated with melting of the charge ordering by visible light. Films grown under small compressive strain exhibit the largest photoinduced resistivity changes. The lifetime of the photoinduced low-resistance state is on the order of half a minute. These photoinduced resistivity changes in thin films of Bi0.4Ca0.6MnO3 make them very promising for photonic device application. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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