Magnetoelectric switching of exchange bias

被引:405
作者
Borisov, P [1 ]
Hochstrat, A
Chen, X
Kleemann, W
Binek, C
机构
[1] Univ Duisburg Essen, D-47048 Duisburg, Germany
[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
关键词
D O I
10.1103/PhysRevLett.94.117203
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The perpendicular exchange bias field, H-EB, of the magnetoelectric heterostructure Cr2O3 (111)/ (Co/Pt)(3) changes sign after field cooling to below the Neel temperature of Cr2O3 in either parallel or antiparallel axial magnetic and electric freezing fields. The switching of H-EB is explained by magnetoelectrically induced antiferromagnetic single domains which extend to the interface, where the direction of their end spins controls the sign of H-EB. Novel applications in magnetoelectronic devices seem possible.
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页数:4
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