Nucleation control in MOVPE of group III-nitrides on SiC substrate

We characterized nitride growth on SiC substrates by using surface sensitive in situ monitoring of shallow angle reflectance (SAR). The growth initiation of the AIN wetting layer on SiC substrate, and that of GaN on the AIN wetting layer are studied, flat growth of the AIN wetting layer on SiC substrate is achieved by excess source supply at the start. and the growth evolution of GaN on the AIN wetting layer depends not only on the source flow rate but also on the species of metalorganic source. Flat GaN and AlN wetting layer growth is achieved by intentional nucleation. (C) 2000 Elsevier Science B.V. All rights reserved.