Effect of heat treatment in sulfur on structural, optical and electrical properties of thermally evaporated In2S3 thin films

被引：20

作者：

Tivanov, M. S. ^{[1
]}

Svito, I. A. ^{[1
]}

Rasool, S. ^{[2
]}

Saritha, K. ^{[2
]}

Reddy, K. T. Ramakrishna ^{[2
]}

Gremenok, V. F. ^{[3
]}

机构：

[1] Belarusian State Univ, Fac Phys, Nezavisimosti 4 Av, Minsk 220030, BELARUS

[2] Sri Venkateswara Univ, Dept Phys, Solar Photovolta Lab, Tirupati 517502, Andhra Pradesh, India

[3] Natl Acad Sci, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS

来源：

SOLAR ENERGY | 2021年 / 222卷

关键词：

In2S3; films; Thermal evaporation; Sulfur annealing; Structure; Optical; Electrical; TEMPERATURE PROCESSED IN2S3; SOLAR-CELLS; SENSING PROPERTIES; WINDOW LAYER; BUFFER LAYER; BETA-IN2S3; GROWTH; IMAGE;

D O I：

10.1016/j.solener.2021.04.057

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Crystallinity, optical band gap, resistivity and photoresponse of thermally evaporated In2S3 thin films deposited at a temperature of 350 degrees C and further annealed in sulfur vapour at different temperature range of 200-300 degrees C is investigated. It is observed that with an increase of annealing temperature, predominantly beta-In2S3 phase is formed and the optical band gap for indirect allowed transitions increases from 1.6 eV to 2.0 eV and for direct allowed transitions from 2.3 eV to 2.7 eV. The electrophysical properties indicate that the activation mechanism of conductivity with an activation energy in the range of 0.5-0.73 eV, which is typical for the presence of indium vacancies in the beta-In2S3 crystal structure and for the replacement of sulfur by oxygen atoms. It is also noted that sulfur annealing at temperatures of 250-300 degrees C leads to an increase in the conductivity and photosensitivity of films, which is suitable for photovoltaic applications.

引用

页码：290 / 297

页数：8

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