Influence of pressure annealing on electrical properties of Mn implanted silicon

被引：4
|
作者：
Jung, Wojciech [1 ]
Misiuk, Andrzej [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
VACUUM | 2007年 / 81卷 / 10期
关键词：
manganese implanted silicon; thermal donors; defects;
D O I：
10.1016/j.vacuum.2007.01.057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of annealing at 610-720K under enhanced hydrostatic pressure (HP) on electrical properties of manganese implanted Czochralski grown silicon (CzSi:Mn) and floating zone grown silicon (FzSi:Mn) (doses up to 1 x 10(16)cm(-1), E= 160keV) was investigated by electrical C-V, I-V and admittance measurements. Mn+ implantation produces both donor-like and acceptor-like implantation-induced defects. The stress-induced decrease in the hole concentration was detected in CzSi implanted by Mn+ and annealed at temperatures 610-670 K. The effect of changing initial conductivity of CzSi:Mn samples of high concentration of interstitial oxygen, from p type to n type, due to thermal donors (TDs) generation has been observed. The electron concentration after type conversion depends on annealing conditions and Mn+ dose. The TDs generation has not been detected in FzSi:Mn samples containing lower oxygen concentration, however, the FzSi:Mn samples annealed at 720 K under 10(5) Pa for 10 h indicate at the implanted side the increased carrier concentration due to the defects produced by Mn+ implantation. The heat treatment of FzSi:Mn under HP at 720 K for 10h results in further increase of carrier concentration due to the defect generation. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1408 / 1410
页数：3
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