Optimization of SnO2-based electron-selective contacts for Si/PEDOT:PSS heterojunction solar cells

被引:17
作者
Zheng, Yupeng [1 ]
Jiang, Bing [1 ]
Gao, Zhongliang [1 ]
Lin, Guilu [2 ]
Sang, Na [2 ]
Chen, Lei [2 ]
Li, Meicheng [1 ]
机构
[1] North China Elect Power Univ, Sch Renewable Energy, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] North China Elect Power Univ, Sch Math & Phys, Beijing 102206, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon heterojunction solar cells; Tin oxide; Electron-selective contact; Fermi level; Surface passivation; EFFICIENCY; OXIDE;
D O I
10.1016/j.solener.2019.09.077
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Tin oxide (SnO2) is a potentially excellent electron-selective contact (ESC) for silicon (Si)-based solar cells due to its satisfactory energy band structure and good crystallinity. However, unsatisfactory electron extraction ability and limited surface passivating effect of SnO2 ESCs will limit the performance of corresponding solar cells. We increase the Fermi level of SnO2 by doping Ethylene diamine tetraacetic acid (EDTA), which endows EDTA-SnO2 better electron extraction ability than SnO2. Moreover, EDTA-SnO2/SiOx bilayer ESC prepared by combining a EDTA-SnO2 layer and a thin silicon oxide (SiOx) film provides better surface passivation than EDTA-SnO2 ESC without impairing the charge transport capability markedly. The planar Si/PEDOT:PSS heterojunction solar cells (HSCs) with EDTA-SnO2/SiOx bilayer ESCs exhibit a power conversion efficiency (eta) of 11.52%, which improves 13.7% in comparison with the eta (10.13%) of HSCs with SnO2 ESCs, mainly caused by the increase in V-oc and FF by 18 mV and 5.4% respectively.
引用
收藏
页码:502 / 506
页数:5
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