Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

被引：63

作者：

Fujiwara, Kosuke ^{[1
]}

Oogane, Mikihiko ^{[1
]}

Yokota, Saeko ^{[1
]}

Nishikawa, Takuo ^{[2
]}

Naganuma, Hiroshi ^{[1
]}

Ando, Yasuo ^{[1
]}

机构：

[1] Tohoku Univ, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

[2] Konicaminolta Opto Inc, LC Business Dept, Hino, Tokyo 1918511, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期

关键词：

ROOM-TEMPERATURE; MAGNETORESISTANCE;

D O I：

10.1063/1.3677266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions with a Ni80Fe20/Ru/Co40Fe40B20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3%/Oe while keeping linearity. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677266]

引用

页数：3

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