Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

被引：3

作者：

Ono, Y. ^{[1
]}

Khalafalla, M. A. H. ^{[1
]}

Nishiguchi, K. ^{[1
]}

Takashina, K. ^{[1
]}

Fujiwara, A. ^{[1
]}

Horiguchi, S. ^{[2
]}

Inokawa, H. ^{[3
]}

Takahashi, Y. ^{[4
]}

机构：

[1] NTT Basic Res Labs, Kanagawa 2430198, Japan

[2] Akita Univ, Fac Engn & Resource Sci, Dept Elect & Elect Engn, Akita 0108502, Japan

[3] Shizuoka Univ, Res Inst Elect, Hamamatsu, Shizuoka 4328011, Japan

[4] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 19期

关键词：

transport properties; silicon; nanodeice; dopant; hopping; coulomb blockade;

D O I：

10.1016/j.apsusc.2008.02.161

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the hole transport in p-channel field-effect transistors doped with boron, at low temperatures (6 - 28 K). In transistors with a relatively large dimension, we observe the acceptor-mediated hopping and carrier freezeout, both of which are strongly influenced by the gate bias. In nanoscale transistors, these features turn into single-charge tunneling, i.e., the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, indicating that what we have observed is single-charge-transistor operation by a single-acceptor quantum dot. (C) 2008 Elsevier B. V. All rights reserved.

引用

收藏

页码：6252 / 6256

页数：5

相关论文

共 20 条

[1] Charge state control and relaxation in an atomically doped silicon device [J].

Andresen, Seren E. S. ;

Brenner, Rolf ;

Wellard, Cameron J. ;

Yang, Changyi ;

Hopf, Toby ;

Escott, Christopher C. ;

Clark, Robert G. ;

Dzurak, Andrew S. ;

Jamieson, David N. ;

Hollenberg, Lloyd C. L. .

NANO LETTERS, 2007, 7 (07) :2000-2003

[2] Controlled single electron transfer between Si:P dots [J].

Buehler, T. M. ;

Chan, V. ;

Ferguson, A. J. ;

Dzurak, A. S. ;

Hudson, F. E. ;

Reilly, D. J. ;

Hamilton, A. R. ;

Clark, R. G. ;

Jamieson, D. N. ;

Yang, C. ;

Pakes, C. I. ;

Prawer, S. .

APPLIED PHYSICS LETTERS, 2006, 88 (19)

[3] ENERGY-RESOLVED MEASUREMENTS OF THE PHONON-IONIZATION OF D- AND A+ CENTERS IN SILICON WITH SUPERCONDUCTING-AL TUNNEL-JUNCTIONS [J].

BURGER, W ;

LASSMANN, K .

PHYSICAL REVIEW LETTERS, 1984, 53 (21) :2035-2037

[4] Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor [J].

Burhanudin, Zainal A. ;

Nuryadi, Ratno ;

Tabe, Michiharu .

APPLIED PHYSICS LETTERS, 2007, 91 (04)

[5] Observation of the linear Stark effect in a single acceptor in Si [J].

Calvet, L. E. ;

Wheeler, R. G. ;

Reed, M. A. .

PHYSICAL REVIEW LETTERS, 2007, 98 (09)

[6] Quantum-dot cellular automata using buried dopants [J].

Cole, JH ;

Greentree, AD ;

Wellard, CJ ;

Hollenberg, LCL ;

Prawer, S .

PHYSICAL REVIEW B, 2005, 71 (11)

[7] RESONANT TUNNELING THROUGH THE BOUND-STATES OF A SINGLE DONOR ATOM IN A QUANTUM-WELL [J].

DELLOW, MW ;

BETON, PH ;

LANGERAK, CJGM ;

FOSTER, TJ ;

MAIN, PC ;

EAVES, L ;

HENINI, M ;

BEAUMONT, SP ;

WILKINSON, CDW .

PHYSICAL REVIEW LETTERS, 1992, 68 (11) :1754-1757

[8] Simple and controlled single electron transistor based on doping modulation in silicon nanowires [J].

Hofheinz, M. ;

Jehl, X. ;

Sanquer, M. ;

Molas, G. ;

Vinet, M. ;

Deleonibus, S. .

APPLIED PHYSICS LETTERS, 2006, 89 (14)

[9] Charge-based quantum computing using single donors in semiconductors [J].

Hollenberg, LCL ;

Dzurak, AS ;

Wellard, C ;

Hamilton, AR ;

Reilly, DJ ;

Milburn, GJ ;

Clark, RG .

PHYSICAL REVIEW B, 2004, 69 (11)

[10] Identification of single and coupled acceptors in silicon nano-field-effect transistors [J].

Khalafalla, M. A. H. ;

Ono, Y. ;

Nishiguchi, K. ;

Fujiwara, A. .

APPLIED PHYSICS LETTERS, 2007, 91 (26)