Desulfonylation of poly(4-hydroxystyrene sulfone) by vapor phase silylation

被引：0

作者：

Shinoda, T

Nishiwaki, T

Inoue, H

机构：

[1] Tokyo Metropolitan Ind Technol Res Inst, Elect Technol Grp, Kita Ku, Tokyo 1158586, Japan

[2] Tokyo Metropolitan Univ, Grad Course Engn, Dept Appl Chem, Hachioji, Tokyo 1920364, Japan

来源：

JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY | 1999年 / 37卷 / 10期

关键词：

desulfonylation; vapor phase silylation; IR spectroscopy; poly(4-hydroxystyrene sulfone); (trimethylsilyl)dimethylamine;

D O I：

10.1002/(SICI)1099-0518(19990515)37:10<1549::AID-POLA16>3.0.CO;2-G

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Vapor phase silylation of poly(4-hydroxystyrene sulfone) (PHOSS) film was carried out with (trimethylsilyl)dimethylamine (TMSDMA) as a silylation reagent. Infrared spectroscopy was used to follow the silylation. Phenolic hydroxyl groups were trimethylsilylated, but desulfonylation of PHOSS was greatly enhanced simultaneously. The reaction rates were investigated at reaction temperatures of 50, 60, and 70 degrees C. The rate of silylation increased with increasing reaction temperature. However, the rate of desulfonylation was very fast in the presence of TMSDMA and was virtually invariant with reaction temperature. It was confirmed that trimethylsilylation in the polymer side chain of PHOSS enhanced desulfonylation in the main chain. Trimethylsilylation might be expected to lower the ceiling temperature of the polymer. (C) 1999 John Wiley & Sons, Inc.

引用

页码：1549 / 1554

页数：6

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