Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

被引：33
|
作者：
Goyal, Nitin [1 ]
Iniguez, Benjamin [2 ]
Fjeldly, Tor A. [1 ]
机构：
[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7034 Trondheim, Norway
[2] Univ Rovira & Virgili, Dept Elect Engn, Tarragona, Spain
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期
关键词：
2-DIMENSIONAL ELECTRON-GAS; FIELD-EFFECT TRANSISTORS; STATES;
D O I：
10.1063/1.4751859
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, a physics based analytical model for the bare surface barrier height and two dimensional electron gas density in AlGaN/GaN heterostructures is presented. The model is based on simple charge neutrality electrostatics across the AlGaN barrier layer and that a low density of surface donor states is the source of the two dimensional electron gas. The model shows good agreement with reported experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751859]
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页数：3
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