Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

被引：33

作者：

Goyal, Nitin ^{[1
]}

Iniguez, Benjamin ^{[2
]}

Fjeldly, Tor A. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7034 Trondheim, Norway

[2] Univ Rovira & Virgili, Dept Elect Engn, Tarragona, Spain

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

关键词：

2-DIMENSIONAL ELECTRON-GAS; FIELD-EFFECT TRANSISTORS; STATES;

D O I：

10.1063/1.4751859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, a physics based analytical model for the bare surface barrier height and two dimensional electron gas density in AlGaN/GaN heterostructures is presented. The model is based on simple charge neutrality electrostatics across the AlGaN barrier layer and that a low density of surface donor states is the source of the two dimensional electron gas. The model shows good agreement with reported experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751859]

引用

页数：3

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