Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition

被引：7

作者：

Lubyanskiy, Ya. V. ^{[1
]}

Bondarev, A. D. ^{[1
]}

Soshnikov, I. P. ^{[1
,2
,3
]}

Bert, N. A. ^{[1
]}

Zolotarev, V. V. ^{[1
]}

Kirilenko, D. A. ^{[1
]}

Kotlyar, K. P. ^{[2
]}

Pikhtin, N. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, Russian Acad Sci, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY; THIN-FILMS; OPTICAL-PROPERTIES; ALN; SURFACE; GROWTH;

D O I：

10.1134/S1063782618020070

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the work we investigate synthesis of aluminum nitride films using reactive ion plasma deposition in oxygen/nitrogen gas mixture for application as optical elements for power semiconductor lasers. The experimental refractive index of synthesized AlNO films is dependent on oxygen composition and is decreasing in diapason from 1.76 to 2.035 at elevation of the oxygen fraction.It is shown that the AlN films synthesized by pure nitrogen plasma are polycrystalline and textured. The oxygen presence in discharging gas results to growth of amorphous phase of the AlNO film.

引用

页码：184 / 188

页数：5

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