Growth of β-FeSi2 thin films on silicon (100) substrate for different annealing times by pulsed laser deposition

被引：3

作者：

Xu, S. C. ^{[1
]}

Gao, S. B. ^{[1
]}

Man, B. Y. ^{[1
]}

Yang, C. ^{[1
]}

Liu, M. ^{[1
]}

Ma, Y. Y. ^{[1
]}

Jiang, S. Z. ^{[1
]}

Chen, C. S. ^{[1
]}

Liu, A. H. ^{[1
]}

Gao, X. G. ^{[1
]}

Sun, Z. C. ^{[1
]}

Hu, B. ^{[1
]}

Wang, C. C. ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China

来源：

VACUUM | 2012年 / 86卷 / 07期

关键词：

beta-FeSi2; Thermal annealing; Photoluminescence; OPTICAL CHARACTERIZATION; PHOTOLUMINESCENCE; ANISOTROPY; DROPLETS; SI;

D O I：

10.1016/j.vacuum.2011.12.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-phase beta-FeSi2 films were fabricated on silicon (100) substrates by pulsed laser deposition (PLO) technique and post-annealing process. The X-ray diffraction (XRD) showed that the diffraction intensity reached a certain threshold and then decreased with the increase of annealing time. The scanning electron microscopy (SEM) observations revealed surface morphologies of the films for different annealing times. The optimal photoluminescence (PL) of the films was obtained after 9 h annealing process. Based upon all the experimental results, it was found that the luminous properties were associated with the crystalline quality and surface morphologies. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1007 / 1011

页数：5

共 25 条

[1]

Angelov C, 2009, J OPTOELECTRON ADV M, V11, P1490

[2] Crystallization of β-FeSi2 droplets by room-temperature pulsed on silicon substrates laser deposition [J].

Ashitomi, M. ;

Katouf, R. ;

Kishi, M. ;

Shishido, T. ;

Sugawara, H. ;

Tsuchiya, M. .

THIN SOLID FILMS, 2007, 515 (22) :8189-8191

[3] Effect of annealing on optical properties of thin films with β-FeSi2 quantum dots [J].

Dmitruk, N. ;

Dozsa, L. ;

Mamykin, S. ;

Kondratenko, O. ;

Molnar, G. .

VACUUM, 2009, 84 (01) :238-242

[4] Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation [J].

Gong, Daoren ;

Li, Dongsheng ;

Yuan, Zhizhong ;

Wang, Minghua ;

Yang, Deren .

APPLIED SURFACE SCIENCE, 2008, 254 (15) :4875-4878

[5]

Grimaldi MG, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.085319

[6] Measurement and simulation of anisotropy in the infrared and Raman spectra of beta-FeSi2 single crystals [J].

Guizzetti, G ;

Marabelli, F ;

Patrini, M ;

Pellegrino, P ;

Pivac, B ;

Miglio, L ;

Meregalli, V ;

Lange, H ;

Henrion, W .

PHYSICAL REVIEW B, 1997, 55 (21) :14290-14297

[7] A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 mu m [J].

Leong, D ;

Harry, M ;

Reeson, KJ ;

Homewood, KP .

NATURE, 1997, 387 (6634) :686-688

[8] Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures [J].

Li, Chun ;

Fang, Guojia ;

Fu, Qiang ;

Su, Fuhai ;

Li, Guohua ;

Wu, Xiaoguang ;

Zhao, Xingzhong .

JOURNAL OF CRYSTAL GROWTH, 2006, 292 (01) :19-25

[9] Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate [J].

Liu, Zhengxin ;

Osamura, Masato ;

Ootsuka, Teruhisa ;

Kuroda, Ryo ;

Fukuzawa, Yasuhiro ;

Otogawa, Naotaka ;

Nakayama, Yasuhiko ;

Makita, Yunosuke ;

Tanoue, Hisao .

JOURNAL OF CRYSTAL GROWTH, 2007, 307 (01) :82-86

[10] A thin-film solar cell of high-quality β-FeSi2/Si heterojunction prepared by sputtering [J].

Liu, ZX ;

Wang, SN ;

Otogawa, N ;

Suzuki, Y ;

Osamura, M ;

Fukuzawa, Y ;

Ootsuka, T ;

Nakayama, Y ;

Tanoue, H ;

Makita, Y .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (03) :276-282

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