Multiferroic properties of polycrystalline Zn-substituted BiFeO3 thin films prepared by pulsed laser deposition

被引：14

作者：

Park, Jung Min ^{[1
]}

Gotoda, Fumiya ^{[1
]}

Nakashima, Seiji ^{[2
]}

Kanashima, Takeshi ^{[1
]}

Okuyama, Masanori ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[2] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712201, Japan

来源：

CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 03期

关键词：

BFZO thin film; Ferroelectirc properties; Ferromagnetic properties; CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTIES; MN;

D O I：

10.1016/j.cap.2011.03.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

BiFe1-xZnxO3 (BFZO) thin films (x = 0, 0.05, and 0.1) have been prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition and their multiferoic properties have been investigated. BFZO thin films shows polycrystalline perovskite single phase. The grains become small with increasing the substitution of Zn, and leakage current of BFZO thin film for x = 0.05 was lower than that of BiFeO3 thin film. The dielectric constant of BFZO thin films for x = 0, 0.05, and 0.1 are 107, 146, and 170 at room temperature, respectively. P-E hysteresis loops were obtained at room temperature and 80 K, and P-r slightly increases at low frequency from 500 Hz to 20 kHz. M-H hysteresis loops show weak ferromagnetic properties at 300 K and 80 K by substitution of Zn. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：S270 / S273

页数：4

共 17 条

[1] Influence of Mn and Nb dopants on electric properties of chemical-solution-deposited BiFeO3 films [J].