Heavy ion-induced single event effects in active pixel sensor array

被引：5

作者：

Cai, Yu-Long ^{[1
,2
,3
]}

Guo, Qi ^{[1
,2
]}

Li, Yu-Dong ^{[1
,2
]}

Wen, Lin ^{[1
,2
]}

Zhou, Dong ^{[1
,2
]}

Feng, Jie ^{[1
,2
]}

Ma, Lin-Dong ^{[1
,2
,3
]}

Zhang, Xiang ^{[1
,2
,3
]}

Wang, Tian-Hui ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China

[2] Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2019年 / 152卷

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

CMOS active pixel sensor (APS); SEE; Heavy ion; RADIATION; COLLECTION; CHARGE;

D O I：

10.1016/j.sse.2018.11.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APSs) can easily be susceptible to heavy-ion radiation in space applications. In this paper, the single event effects (SEEs) of pinned photodiode (PPD) active pixel sensor array exposed to heavy ion (Tantalum, Xenon, Krypton) with linear energy transfer (LET) (37, 50.34 and 81.35 MeV.cm(2)/mg) have been studied. During the heavy ion exposure, all devices were fully functional and integration time was changed, no single event latch-up (SEL) and single event functional interrupt (SEFI) happened. However, dark background with pixel clusters in a frame, which indicates the single event transient (SET) effect were observed. The number of the pixel clusters, total collected charge and cluster size were analyzed in detail. Finally, SRIM simulations were conducted on a PPD in order to predict the number of the electron-hole pairs generated by a heavy ion.

引用

页码：93 / 99

页数：7

共 16 条

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[Anonymous], 2010, 12882010 EMVA

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