Passivation of semi-insulating polycrystalline CdZnTe films

被引：10

作者：

Kim, Ki Hyun ^{[1
]}

Won, Jae Ho ^{[1
]}

Cho, Shin Hang ^{[1
]}

Suh, Jong Hee ^{[1
]}

Cho, Pyong Kon ^{[1
]}

Hong, Jinki ^{[1
]}

Kim, Sun Ung ^{[1
]}

Han, You Ree ^{[2
]}

机构：

[1] Korea Univ, Dept Display & Semicond Phys, Chungnam 339800, South Korea

[2] Korea Univ, Grad Sch Educ, Seoul 136701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 01期

关键词：

sulfur passivation; leakage current; CdTeS; heterojunction; semi-insulating CdZnTe; inter-pixel resistance; 1/f noise;

D O I：

10.3938/jkps.53.317

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface effects play an important role in the overall performance of X-ray detector. The effects of passivation with (NH4)(2)S on semi-insulating polycrystalline CdZnTe thick films were analyzed with X-ray photoelectron spectroscopy (XPS), photoconductive decay (PCD), noise power spectrum and pulse height spectra measurements. Sulfur passivation with (HN4)(2)S effectively removes the Te-oxide layers on the CdZnTe surface, reduces the surface leakage current and gives higher energy resolution by suppressing 1/f noise.

引用

页码：317 / 321

页数：5

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