Development of stacking faults in strained silicon layers

被引：3

作者：

Bedell, SW ^{[1
]}

Reznicek, A ^{[1
]}

Yang, B ^{[1
]}

Hovel, HJ ^{[1
]}

Ott, JA ^{[1
]}

Fogel, K ^{[1
]}

Domenicucci, AG ^{[1
]}

Sadana, DK ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2005年

关键词：

D O I：

10.1109/SOI.2005.1563568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：144 / 145

页数：2

共 5 条

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